Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1954-1957

  Lin, C A ^a   Lin, T D ^a   Chiang, T H ^a   Chiu, H C ^a   Chang, P ^a   Hong, M ^a   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

A3. Molecular beam epitaxy; B2. Dielectric materials; B2. Semiconducting gallium arcsenide; B3. Field effect transistors

Indexed keywords

ALUMINUM; CAPACITANCE; CRYSTAL GROWTH; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DRAIN CURRENT; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

A3. MOLECULAR BEAM EPITAXY; B2. DIELECTRIC MATERIALS; B2. SEMICONDUCTING GALLIUM ARCSENIDE; B3. FIELD EFFECT TRANSISTORS; CAPACITANCE-VOLTAGE CHARACTERISTICS; DRAIN CURRENT DENSITIES; GATE BIAS; GATE LENGTHS; GATE OXIDES; INGAAS/GAAS; METAL GATES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOLECULAR-BEAM EPITAXIES; MOS FETS; N CHANNELS; PEAK TRANSCONDUCTANCES; TRANSFER CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 63349110308     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.013     Document Type: Article

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