Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Lee, K Y ^a   Lee, Y J ^a   Chang, P ^a   Huang, M L ^a   Chang, Y C ^a   Hong, M ^a   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS;

ATOMIC-LAYER-DEPOSITED; EFFECTIVE THICKNESS;

HAFNIUM COMPOUNDS;

EID: 46049110934     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952826     Document Type: Article

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