Structure of HfO2 films epitaxially grown on GaAs (001)

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Hsu, C H ^a,c   Chang, P ^b   Lee, W C ^b   Yang, Z K ^b   Lee, Y J ^b   Hong, M ^b   Kwo, J ^b   Huang, C M ^a   Lee, H Y ^a  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

HFO2 FILMS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; MONOCLINIC PHASES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33748957995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356895     Document Type: Article

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