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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2

(6) Chang, P a Lee, W C a Huang, M L a Lee, Y J a Hong, M a Kwo, J a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HAFNIUM OXIDES; III-V SEMICONDUCTORS; LEAKAGE CURRENTS; MOLECULAR BEAMS; PASSIVATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; THERMODYNAMIC STABILITY;

CAPACITANCE DISPERSION; CAPACITANCE-VOLTAGE CHARACTERISTICS; EFFECTIVE THICKNESS; EPITAXIALLY GROWN; HFO 2; INGAAS/GAAS; LOW-LEAKAGE CURRENT; MOLECULAR-BEAM EPITAXY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; THICKNESS VALUE;

MOLECULAR BEAM EPITAXY;

EID: 84905930391 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3273942 Document Type: Conference Paper

Times cited : (7)

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