Al2O3/Ga2O3(Gd 2O3) passivation on In0.20Ga 0.80As/GaAs - Structural intactness with high-temperature annealing

Journal of Physics D: Applied Physics

Volumn 43, Issue 13, 2010, Pages

  Lee, Y J ^a   Lee, C H ^a   Tung, L T ^a   Chiang, T H ^a   Lai, T Y ^a   Kwo, J ^a   Hsu, C H ^b,c   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CAPPING LAYER; ELECTRICAL LEAKAGE; FIELD-EFFECT; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-TEMPERATURE ANNEALING; IN-SITU; METAL OXIDE SEMICONDUCTOR; MISFIT DISLOCATIONS; MOS TECHNOLOGY;

ALUMINUM; CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; GADOLINIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PASSIVATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SYNCHROTRON RADIATION; X RAY DIFFRACTION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77949670342     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/13/135101     Document Type: Article

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