SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 246-248

Metal-oxide-semiconductor devices on p-type Ge with La2O 3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal

(6) Galata, S F a Mavrou, G a Tsipas, P a Sotiropoulos, A a Panayiotatos, Y a Dimoulas, A a

a INSTITUTE OF MATERIALS SCIENCE (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GATES (TRANSISTOR); GERMANIUM; LANTHANUM; LOGIC GATES; METAL INSULATOR BOUNDARIES; MIS DEVICES; OZONE WATER TREATMENT; PASSIVATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

ELECTRICAL PROPERTIES; EQUIVALENT-OXIDE THICKNESS; GATE STACKS; HIGH-K GATE DIELECTRICS; INTERFACE STATES DENSITIES; METAL-INSULATOR-SEMICONDUCTOR CAPACITORS; METAL-OXIDE SEMICONDUCTORS; P TYPES; PASSIVATING LAYERS; PASSIVATING PROPERTIES; POST-METALLIZATION ANNEAL;

GATE DIELECTRICS;

EID: 59949093396 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3043533 Document Type: Article

Times cited : (11)

References (13)

1
- 44449095646
- 0013-4651 10.1149/1.2919115.
- D. P. Brunco, J. Electrochem. Soc. 0013-4651 10.1149/1.2919115 155, H552 (2008).
- (2008) J. Electrochem. Soc. , vol.155 , pp. 552
- Brunco, D.P.¹

2
- 37549029897
- 0018-9383 10.1109/TED.2007.902732.
- G. Nicholas, B. De Jaeger, D. P. Brunco, P. Zimmerman, G. Eneman, K. Martens, M. Meuris, and M. M. Heyns, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007.902732 54, 2503 (2007).
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 2503
- Nicholas, G.¹ De Jaeger, B.² Brunco, D.P.³ Zimmerman, P.⁴ Eneman, G.⁵ Martens, K.⁶ Meuris, M.⁷ Heyns, M.M.⁸

3
- 36348973641
- 0038-1101 10.1016/j.sse.2007.09.029.
- A. Dimoulas, Solid-State Electron. 0038-1101 10.1016/j.sse.2007.09.029 51, 1508 (2007).
- (2007) Solid-State Electron. , vol.51 , pp. 1508
- Dimoulas, A.¹

4
- 34247585144
- 0040-6090 10.1016/j.tsf.2006.11.129.
- A. Dimoulas, Thin Solid Films 0040-6090 10.1016/j.tsf.2006.11.129 515, 6337 (2007).
- (2007) Thin Solid Films , vol.515 , pp. 6337
- Dimoulas, A.¹

5
- 34547564665
- 0021-8979 10.1063/1.2756519.
- D. P. Brunco, J. Appl. Phys. 0021-8979 10.1063/1.2756519 102, 024104 (2007).
- (2007) J. Appl. Phys. , vol.102 , pp. 024104
- Brunco, D.P.¹

6
- 17044437005
- 0003-6951 10.1063/1.1854195.
- A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa, and M. Caymax, Appl. Phys. Lett. 0003-6951 10.1063/1.1854195 86, 032908 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 032908
- Dimoulas, A.¹ Mavrou, G.² Vellianitis, G.³ Evangelou, E.⁴ Boukos, N.⁵ Houssa, M.⁶ Caymax, M.⁷

7
- 34248666115
- 0167-9317 10.1016/j.mee.2007.04.107.
- J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai, Microelectron. Eng. 0167-9317 10.1016/j.mee.2007.04.107 84, 2336 (2007).
- (2007) Microelectron. Eng. , vol.84 , pp. 2336
- Song, J.¹ Kakushima, K.² Ahmet, P.³ Tsutsui, K.⁴ Sugii, N.⁵ Hattori, T.⁶ Iwai, H.⁷

8
- 38349161968
- 0021-8979 10.1063/1.2827499.
- G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, J. Appl. Phys. 0021-8979 10.1063/1.2827499 103, 014506 (2008).
- (2008) J. Appl. Phys. , vol.103 , pp. 014506
- Mavrou, G.¹ Tsipas, P.² Sotiropoulos, A.³ Galata, S.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶ Marchiori, C.⁷ Fompeyrine, J.⁸

9
- 59949096362
- Proceedings of the ESSDERC, (unpublished),.
- C. Rossel, Proceedings of the ESSDERC, 2008 (unpublished), p. 79.
- (2008) , pp. 79
- Rossel, C.¹

10
- 0842268482
- 0003-6951 10.1063/1.1639942.
- G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J. C. Hooker, and T. Conard, Appl. Phys. Lett. 0003-6951 10.1063/1.1639942 84, 260 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 260
- Apostolopoulos, G.¹ Vellianitis, G.² Dimoulas, A.³ Hooker, J.C.⁴ Conard, T.⁵

11
- 0004277486
- (Wiley, New York),.
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), p. 196.
- (1982) MOS Physics and Technology , pp. 196
- Nicollian, E.H.¹ Brews, J.R.²

12
- 57049158157
- 0003-6951 10.1063/1.3033546.
- G. Mavrou, P. Tsipas, A. Sotiropoulos, S. F. Galata, Y. Panayiotatos, and A. Dimoulas, Appl. Phys. Lett. 0003-6951 10.1063/1.3033546 93, 212904 (2008).
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212904
- Mavrou, G.¹ Tsipas, P.² Sotiropoulos, A.³ Galata, S.F.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶

13
- 0037084710
- 0163-1829 10.1103/PhysRevB.65.075105.
- X. Zhao and D. Vanderbilt, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65. 075105 65, 075105 (2002).
- (2002) Phys. Rev. B , vol.65 , pp. 075105
- Zhao, X.¹ Vanderbilt, D.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.