GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2006-2009

  Lee, W C ^a   Lee, Y J ^a   Kwo, J ^a   Hsu, C H ^b   Lee, C H ^a   Wu, S Y ^a   Ng, H M ^c   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

A1. High resolution transmission electron microscopy; A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; B1. GaN; B1. Sc2O3

Indexed keywords

CRYSTAL GROWTH; ELECTRON DIFFRACTION; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLASMA DIAGNOSTICS; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANDIUM; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. GAN; B1. SC2O3;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 63549087803     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.093     Document Type: Article

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