Annealing condition optimization and electrical characterization of amorphous LaAl O3 GaAs metal-oxide-semiconductor capacitors

Applied Physics Letters

Volumn 90, Issue 24, 2007, Pages

  Choi, Donghun ^a   Harris, James S ^a   Warusawithana, Maitri ^b   Schlom, Darrell G ^b  

^a STANFORD UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC-CAPPING LAYERS; ELECTRICAL CHARACTERIZATION; FREQUENCY DISPERSIONS; MOLECULAR-BEAM DEPOSITION;

ELECTRON TRAPS; INTERFACES (MATERIALS); LANTHANUM ALLOYS; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS;

CAPACITORS;

EID: 34250633680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748308     Document Type: Article

References (13)

1. W. E. Spicer, P. Chye, P. Skeath, C. Y. Su, and I. Lindau, Inst. Phys. Conf. Ser. 50, 216 (1980).
2. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, J. Vac. Sci. Technol. 17, 1019 (1980).
3. R. P. H. Chang, T. T. Sheng, C. C. Chang, and J. J. Coleman, Appl. Phys. Lett. 33, 341 (1978).
4. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. R. Kwo, IEEE Trans. Electron Devices 44, 214 (1997).
5. P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, K. K. N. M. Hong, and J. Bude, IEEE Trans. Electron Devices 24, 209 (2003).
6. J. Morais, L. Miotti, G. V. Soares, S. R. Teixeira, R. Pezzi, K. P. Bastos, I. J. R. Baumvol, A. L. P. R. Baumvol, J. J. Chambers, M. R. Visokay, and L. Colombo, Appl. Phys. Lett. 81, 2995 (2002).
7. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Hollander, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004).
8. L. F. Edge, D. G. Schlom, P. Sivasubramani, R. M. Wallace, B. Hollander, and J. Schubert, Appl. Phys. Lett. 88, 112907 (2006).
9. D. Choi, M. Warusawithana, C. O. Chui, J. Chen, W. Tsai, D. G. Schlom, and J. S. Harris, Mater. Res. Soc. Symp. Proc. (to be published).
10. I. Karpov, N. Venkateswaran, G. Bratina, W. Gladfelter, A. Franciosi, and L. Sorba, J. Vac. Sci. Technol. B 13, 2041 (1995).
11. H. H. Farrell and C. J. Palmstrom, J. Vac. Sci. Technol. B 8, 903 (1990).
12. A. Ohtake, M. Ozeki, T. Yasuda, and T. Hanada, Phys. Rev. B 65, 165315 (2002).
13. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Techonlogy (Wiley, New York, 2003), p. 197.