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Volumn 91, Issue 4, 2008, Pages 585-589

Transmission electron microscopy characterization of HfO 2/GaAs(001) heterostructures grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; FILM THICKNESS; HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

EID: 43449110706     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4493-3     Document Type: Article
Times cited : (9)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.