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Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

Achieving a low interfacial density of states in atomic layer deposited Al2 O3 on In0.53 Ga0.47 As

(7) Chiu, H C a Tung, L T a Chang, Y H a Lee, Y J a Chang, C C a Kwo, J a Hong, M a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ENERGY GAP; GALLIUM ALLOYS; OZONE WATER TREATMENT;

AIR EXPOSURES; ATOMIC LAYER DEPOSITED; BAND GAPS; BULK TRAPS; CHARGE PUMPING METHODS; DEPTH PROFILES; ENERGY DEPENDENCES; HIGH EFFICIENCIES; INTERFACIAL DENSITIES; LOW FREQUENCIES; QUASISTATIC; QUASISTATIC CAPACITANCES; ROOM TEMPERATURES; SEMICONDUCTOR DEPOSITIONS; WEAK INVERSIONS;

ATOMIC PHYSICS;

EID: 56849118215 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3027476 Document Type: Article

Times cited : (60)

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