Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers

Solid-State Electronics

Volumn 54, Issue 9, 2010, Pages 965-971

  Chu, L K ^a   Chu, R L ^a   Lin, T D ^a   Lee, W C ^a   Lin, C A ^a   Huang, M L ^a   Lee, Y J ^a   Kwo, J ^a,b   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

CF4; Ge; High dielectric; MOSCAP; MOSFET

Indexed keywords

ELECTRICAL ANALYSIS; ELECTRON BEAM EVAPORATION; FIELD-EFFECT; GATE LENGTH; GATE WIDTHS; GE SUBSTRATES; INTERFACIAL DENSITY; INTERFACIAL LAYER; INTERFACIAL PASSIVATION LAYERS; MAXIMUM TRANSCONDUCTANCE; METAL GATE; METAL OXIDE SEMICONDUCTOR; MOS-FET; MOSFETS; P-MOSFETS; SATURATION DRAIN CURRENT DENSITY; THERMALLY STABLE; ULTRA-HIGH;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; GADOLINIUM; HAFNIUM COMPOUNDS; HOLE MOBILITY; MOS CAPACITORS; MOSFET DEVICES; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SMELTING; TITANIUM NITRIDE; VACUUM; VACUUM EVAPORATION;

GERMANIUM;

EID: 77954218873     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.034     Document Type: Conference Paper

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