Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Yang, Z K ^a   Lee, W C ^a   Lee, Y J ^a   Chang, P ^a   Huang, M L ^a,b   Hong, M ^a   Hsu, C H ^b,c   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); EPITAXIAL FILMS; MOLECULAR BEAM EPITAXY; PERMITTIVITY;

ENHANCED DIELECTRIC CONSTANT; EPITAXIAL ORIENTATION; INTERFACIAL LAYERS; NANOMETER THICK CUBIC;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34247269225     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722226     Document Type: Article

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