Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2546-2550

  Fissel, A ^a   Dargis, R ^a   Bugiel, E ^a   Schwendt, D ^a   Wietler, T ^a   Krugener J ^a   Laha, A ^a   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Silicon on insulator; Solid phase epitaxy

Indexed keywords

CRYSTALLINE QUALITY; ELECTRICAL PROPERTY; EPITAXIAL OVERGROWTH; INTERFACE PROPERTY; MOLECULAR BEAM EPITAXIAL; P-TYPE; SI (1 1 1); SI LAYER; SILICON ON INSULATOR; SINGLE CRYSTALLINE SILICON; SINGLE-CRYSTALLINE; SOLID PHASE EPITAXY; TEMPLATE LAYERS; THERMAL-ANNEALING;

CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GADOLINIUM; MICROSENSORS; PHASE INTERFACES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76049090488     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.139     Document Type: Article

References (12)

1. Zhang P., Tevaarwerk E., Park B.-N., Savage D.E., Celler G.E., Knezevic I., Evans P.G., Eriksson M.A., and Lagally M.G. Nature 439 (2006) 703
2. Celler G.K., and Cristoloveanu S. J. Appl. Phys. 93 (2003) 4955
3. Osten H.J., Laha A., Czernohorsky M., Dargis R., Bugiel E., and Fissel A. ECS Trans. 11 (2007) 287
4. Jiang Y., Adams J.B., and van Schilfgaarde M. J. Chem. Phys. 123 (2005) 064701
5. Fissel A., Kühne D., Bugiel E., and Osten H.J. Appl. Phys. Lett. 88 (2006) 153105
6. Osten H.J., Bugiel E., and Klatt J. Appl. Phys. Lett. 61 (1992) 1918
7. Wang C.R., Bierkandt M., Paprotta S., Wietler T., and Hofmann K.R. Appl. Phys. Lett. 86 (2005) 033111
8. Wang J.X., Laha A., Fissel A., Schwendt D., Dargis R., Watahiki T., Shayduk R., Braun W., Liu T.M., and Osten H.J. Semicon. Sci. Technol. 24 (2009) 045021
9. Narayanan V., Guha S., Bojarrczuk N.A., and Ross F.M. J. Appl. Phys. 93 (2003) 251
10. Schroeder T., Zaumseil P., Seifarth O., Guissani A., Müssig H.-J., Storck P., Geiger D., Lichte H., and Dabrowski J. New J. Phys. 10 (2008) 113004
11. Headrick R.L., Weir B.E., Bevk J., Freer B.S., Eaglesham D.J., and Feldman L.C. Phys. Rev. Lett. 65 (1990) 1128
12. Masetti G., Severi M., and Solmi S. IEEE Trans. Electronic Devices, ED-30 (1983) 764