Advances in gaas mosfet's using Ga2O3(Gd2O3) AS gate oxide

Materials Research Society Symposium - Proceedings

Volumn 573, Issue , 1999, Pages 219-225

  Wang, Y C ^a   Hong, M ^a   Kuo, J M ^a   Mannaerts, J P ^a   Kwo, J ^a   Tsai, H S ^a   Krajewski, J J ^a   Weiner, J S ^a   Chen, Y K ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); HYSTERESIS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

DEPLETION MODES; INVERSION MODES;

MOSFET DEVICES;

EID: 0032644085     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-573-219     Document Type: Article

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