0.86-nm CET gate stacks with epitaxial Gd2O3 high-κ dielectrics and FUSI NiSi metal electrodes

IEEE Electron Device Letters

Volumn 27, Issue 10, 2006, Pages 814-816

  Gottlob, H D B ^a   Echtermeyer, T ^a   Schmidt, M ^a   Mollenhauer, T ^a   Efavi, J K ^a   Wahlbrink, T ^a   Lemme, M C ^a   Czernohorsky, M ^b   Bugiel, E ^b   Fissel, A ^b   Osten, H J ^b   Kurz, H ^a  

^a AMO GMBH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Epitaxial dielectric; Fully silicided (FUSI); Gd2O3; High k; Metal gate; NiSi; Rare earth oxide

Indexed keywords

EPITAXIAL DIELECTRIC; FULLY SILICIDED (FUSI); GD2O3; HIGH-K; METAL GATE; NISI; RARE EARTH OXIDE;

CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; GADOLINIUM; GATES (TRANSISTOR); INDUSTRIAL MANAGEMENT; LEAKAGE CURRENTS; LOGIC GATES; METALS; MOS CAPACITORS; NICKEL OXIDE; RARE EARTHS; SEMICONDUCTOR MATERIALS; SILICIDES; SMELTING; TECHNOLOGICAL FORECASTING;

GATE DIELECTRICS;

EID: 33846089635     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.882581     Document Type: Article

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