Nanoscale characterization of the dielectric charging phenomenon in PECVD silicon nitride thin films with various interfacial structures based on Kelvin probe force microscopy

Nanotechnology

Volumn 22, Issue 20, 2011, Pages

  Zaghloul, U ^a,b,c   Papaioannou, G J ^a,b,d   Wang, H ^a,b   Bhushan, B ^c   Coccetti, F ^a,b,e   Pons, P ^a,b   Plana, R ^a,b  

^a LAAS CNRS   (France)

^b INSA   (France)

^c OHIO STATE UNIVERSITY   (United States)

^d UNIVERSITY OF ATHENS   (Greece)

^e Novamems   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; BIAS POLARITY; CAPACITIVE RF MEMS SWITCH; CHARACTERIZATION TECHNIQUES; CHARGING/DISCHARGING; DIELECTRIC CHARGING; DISCHARGE CURRENTS; ELECTROSTATICALLY DRIVEN; FAST SOLUTIONS; INTERFACIAL STRUCTURES; KELVIN PROBE FORCE MICROSCOPY; LOW COSTS; MATERIAL CHARACTERIZATION TECHNIQUES; MATERIAL DEPOSITION; MEMS SWITCHES; MEMSDEVICES; NANOSCALE CHARACTERIZATION; PECVD SILICON NITRIDE; PLANAR SUBSTRATE; SILICON NITRIDE THIN FILMS; THIN DIELECTRIC FILM;

BOND STRENGTH (CHEMICAL); DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC SWITCHES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTOLITHOGRAPHY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER QUALITY; PROBES; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION;

EID: 79953291283     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/20/205708     Document Type: Article

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