SCOPUS 정보 검색 플랫폼

Volumn 227-230, Issue PART 1, 1998, Pages 533-537

Changes in the Poole-Frenkel coefficient with current induced defect band conductivity of hydrogenated amorphous silicon nitride

(3) Lau, S P a Shannon, J M a Sealy, B J a

a UNIVERSITY OF SURREY (United Kingdom)

Author keywords

Amorphous silicon nitride; Defects; Poole Frenkel effect; Transport

Indexed keywords

AMORPHOUS ALLOYS; CARRIER CONCENTRATION; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; INDUCED CURRENTS; SEMICONDUCTOR DIODES; SILICON NITRIDE; THIN FILMS;

METAL SEMICONDUCTOR METAL THIN FILM DIODES; POOLE-FRENKEL COEFFICIENT;

AMORPHOUS FILMS;

EID: 0032064990 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00113-6 Document Type: Article

Times cited : (32)

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