Charging-Effects in RF capacitive switches influence of insulating layers composition

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1700-1704

  Lamhamdi, M ^a,b   Guastavino, J ^a   Boudou, L ^a   Segui, Y ^a   Pons, P ^b   Bouscayrol, L ^b   Plana, R ^b  

^a Laboratoire Plasma et Conversion d'Energie   (France)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; COMPOSITION; DIELECTRIC PROPERTIES; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC INSULATING MATERIALS; SILICON NITRIDE;

CAPACITIVE SWITCHES; CHARGING/DISCHARGING PROCESSES; CURRENT MEASUREMENTS; DIELECTRIC CHARGING;

ELECTRIC SWITCHES;

EID: 33747756123     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.046     Document Type: Article

References (6)

1. Melle S, Florence F, Dubuc D, Grenier K, Pons P, Muraro JL, et al. Investigation of Dielectric degradation of micro wave capacitive micro switches IEEE MEMS 2004. January 25-29, 2004 Maastricht Netherlands.
2. Rottenberg X, Nauwelaers B, De Raedt W, Tilmans HAC. Distributed dielectric charging and its impact on RF MEMS 12th GAAS Symposium - Amsterdam, 2004.
3. Xiaobin Yuan, James C. Hwang, David Forehand, Charles L. goldsmith Modelling and Characterization of Dielectric-Charging Effects in RF MEMS Capacitive Switches IEEE-2005 september 18-21, 2005 Rotterdam, Netherlands.
4. Exarchos M, Papandreou E, Pons P, Lamhamdi M, Papaioannou GJ, Plana R. Charging of Radiation Induced Defects in RF MEMS Dielectric Films Accepted at ESREF 2006, 3-6 Oct 2006, Wuppertal, Germany.
5. Gupta DK, Doughty K, Brockley RS. Charging and discharging currents in polyvinylidene fluoride. J Phys D: Appl Phys 13:2101-4.
6. Parsons G.N., Souk J.H., and Batey J. Low hydrogen content stoichiometric silicon nitride films deposited by plasma-enhanced chemical vapour deposition. J Appl Phys 70 3 (1991) 1553-1560