Charging processes in silicon nitride films for RF-MEMS capacitive switches: The effect of deposition method and film thickness

Materials Research Society Symposium Proceedings

Volumn 1139, Issue , 2009, Pages 141-146

  Zaghloul, U ^a   Belarni, A ^a   Coccetti, F ^a   Papaioannou, G J ^a,b   Plana, R ^a   Pons, P ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING PROCESS; DEPOSITION METHODS; DIELECTRIC CHARGING; HIGH FREQUENCY; KELVIN PROBE MICROSCOPY; LOW FREQUENCY; RF-MEMS; SILICON NITRIDE FILM; SINX FILMS; SINX SURFACE;

COMPOSITE MICROMECHANICS; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC SWITCHES; GOLD DEPOSITS; MAGNETIC FILMS; MEMS; MICROELECTROMECHANICAL DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

SILICON WAFERS;

EID: 70449604647     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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