A systematic reliability investigation of the dielectric charging process in electrostatically actuated MEMS based on Kelvin probe force microscopy

Journal of Micromechanics and Microengineering

Volumn 20, Issue 6, 2010, Pages

  Zaghloul, U ^a,b   Papaioannou, G J ^a,b,c   Coccetti, F ^a,b,d   Pons, P ^a,b   Plana, R ^a,b  

^a LAAS CNRS   (France)

^b INSA   (France)

^c UNIVERSITY OF ATHENS   (Greece)

^d Novamems   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE RF MEMS SWITCH; DECAY TIME CONSTANT; DEPOSITION CONDITIONS; DIELECTRIC CHARGING; DIELECTRIC SURFACE; DIELECTRIC THICKNESS; ELECTROPLATED GOLD; KELVIN PROBE FORCE MICROSCOPY; LOW AND HIGH FREQUENCIES; MATERIAL STOICHIOMETRY; MEMS SWITCHES; METALLIC LAYERS; MICROELECTROMECHANICAL SYSTEMS; PECVD SILICON NITRIDE; RELAXATION TIME CONSTANT; SILICON SUBSTRATES; SUBSTRATE NATURE; SURFACE POTENTIAL DISTRIBUTIONS; SYSTEMATIC RELIABILITY; THERMALLY GROWN OXIDE; THIN DIELECTRIC FILM;

COMPOSITE MICROMECHANICS; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC CHARGE; ELECTRIC SWITCHES; ELECTROSTATIC ACTUATORS; GOLD COATINGS; GOLD DEPOSITS; MEMS; MICROELECTROMECHANICAL DEVICES; PROBES; RELAXATION PROCESSES; SILICON NITRIDE; STOICHIOMETRY; SUBSTRATES;

OXIDE FILMS;

EID: 78650886540     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/6/064016     Document Type: Article

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