Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 404-407

  Daigler, Richard ^a   Papandreou, Eleni ^b   Koutsoureli, Matroni ^b   Papaioannou, George ^b   Papapolymerou, John ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

Dielectric charging; MEMS capacitive switch; MIM capacitor; Silicon nitride

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC CHARGE; MEMS; METAL INSULATOR BOUNDARIES; MICROELECTROMECHANICAL DEVICES; MIM DEVICES; NITRIDES; SILICON NITRIDE; SWITCHES;

CHARGING PROCESS; CHARGING RATES; DEPOSITION CONDITIONS; DIELECTRIC CHARGING; DIFFERENT THICKNESS; HIGH TEMPERATURES; LOW TEMPERATURES; MEMS CAPACITIVE SWITCH; METAL CONTACTS; METAL INSULATOR METALS; MIM CAPACITOR; RF-MEMS; SYSTEMATIC INVESTIGATIONS;

ELECTRIC SWITCHES;

EID: 59049102363     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.014     Document Type: Article

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