Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1309-1314

  Zaghloul, U ^a,b   Papaioannou, G ^c   Coccetti, F ^a   Pons, P ^a   Plana, R ^a,b  

^a LAAS CNRS   (France)

^b INSA   (France)

^c UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE/DISCHARGE; CURRENT TRANSIENTS; DEPOSITION CONDITIONS; DIELECTRIC CHARGING; DISCHARGING PROCESS; ELECTRIC FIELD INTENSITIES; HIGH FREQUENCY; LOW FREQUENCY; MEMS CAPACITIVE SWITCH; METAL-INSULATOR-METAL CAPACITORS; POOLE-FRENKEL; RF-MEMS; SILICON NITRIDE FILM; SILICON NITRIDE THIN FILMS; SIN FILMS; STORED CHARGE; SYSTEMATIC INVESTIGATIONS; TEST STRUCTURE;

ELECTRIC FIELDS; ELECTRIC SWITCHES; MAGNETIC FILMS; MEMS; METAL INSULATOR BOUNDARIES; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 69349095575     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.006     Document Type: Article

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