A novel low cost failure analysis technique for dielectric charging phenomenon in electrostatically actuated MEMS devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 237-245

  Zaghloul, U ^a,b   Coccetti, F ^a,b,d   Papaioannou, G J ^a,b,c   Pons, P ^a,b   Plana, R ^a,b  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c UNIVERSITY OF ATHENS   (Greece)

^d Novamems   (France)

Author keywords

Dielectric charging; Electrostatic MEMS; Failure analysis; Kelvin Probe Force Microscopy; Silicon nitride

Indexed keywords

AFM TIP; ANALYSIS TECHNIQUES; BIAS POLARITY; CAPACITIVE RF MEMS SWITCH; DIELECTRIC CHARGING; ELECTROSTATIC MEMS; ELECTROSTATICALLY DRIVEN; FAST SOLUTIONS; FTIR; KELVIN PROBE FORCE MICROSCOPY; LOW COSTS; MATERIAL CHARACTERIZATION TECHNIQUES; MATERIAL DEPOSITION; MEMSDEVICES; PECVD SILICON NITRIDE; PLANAR SUBSTRATE; RELIABILITY ASSESSMENTS; SIN FILMS; SUBSTRATE NATURE; THIN DIELECTRIC FILM; XPS;

BOND STRENGTH (CHEMICAL); COST BENEFIT ANALYSIS; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTROSTATIC ACTUATORS; ELECTROSTATICS; FAILURE ANALYSIS; PHOTOLITHOGRAPHY; PROBES; RELIABILITY ANALYSIS; SILICON NITRIDE; SUBSTRATES;

QUALITY ASSURANCE;

EID: 77957929807     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488822     Document Type: Conference Paper

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