Temperature study of the dielectric polarization effects of capacitive RF MEMS switches

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 11, 2005, Pages 3467-3473

  Papaioannou, Giorgos ^a,b   Exarchos, Michael Nicolas ^a,b,d   Theonas, Vasilios ^a,b,d   Wang, Guoan ^a,c   Papapolymerou, John ^a,c,e  

^a IEEE   (Greece)

^b UNIVERSITY OF ATHENS   (Greece)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d UNIVERSITY OF WEST ATTICA   (Greece)

^e URSI   (United States)

Author keywords

Dielectric charging; RF microelectromechanical system (MEMS); Temperature effect; Transient response; Voltage stress

Indexed keywords

DIELECTRIC CHARGING; RF MICROELECTROMECHANICAL SYSTEMS (RF MEMS); TRANSIENT RESPONSE; VOLTAGE STRESS;

ACTIVATION ENERGY; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC CHARGE; MICROELECTROMECHANICAL DEVICES; POLARIZATION; SILICON NITRIDE; THERMAL EFFECTS; TRANSIENTS; VOLTAGE CONTROL;

ELECTRIC SWITCHES;

EID: 28144457995     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.857336     Document Type: Conference Paper

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