Assessment of dielectric charging in electrostatically driven MEMS devices: A comparison of available characterization techniques

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1615-1620

  Zaghloul, U ^a,b   Koutsoureli, M ^c   Wang, H ^a,b   Coccetti, F ^a,b,d   Papaioannou, G ^a,b,c   Pons, P ^a,b   Plana, R ^a,b  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c UNIVERSITY OF ATHENS   (Greece)

^d Novamems   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASSESSMENT METHODS; CHARACTERIZATION METHODS; CHARACTERIZATION TECHNIQUES; CONTINUOUS DISTRIBUTION; DIELECTRIC CHARGING; DISCHARGE CURRENTS; ELECTRICAL PROPERTY; ELECTROSTATICALLY DRIVEN; KELVIN PROBE FORCE MICROSCOPY; LAYER STRUCTURES; MEMS SWITCHES; MEMSDEVICES; METAL-INSULATOR-METAL CAPACITORS; MICROELECTROMECHANICAL SYSTEMS; MIM CAPACITORS; RELAXATION TIME CONSTANT; THERMALLY STIMULATED DEPOLARIZATION CURRENTS; TIME WINDOWS;

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTROSTATIC ACTUATORS; METAL INSULATOR BOUNDARIES; RELAXATION PROCESSES; TIME SWITCHES;

MIM DEVICES;

EID: 79251571834     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.027     Document Type: Conference Paper

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