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Volumn , Issue , 2007, Pages 579-582
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Si3N4 thin films proprerties for RF-MEMS reliability investigation
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Author keywords
Charge and discharging processes; Charge imaging by atomic force microscopy; Dielectric charging; Failure modes and mechanisms; FTIR; Micro switches; Reliability; RF MEMS
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Indexed keywords
ACTUATORS;
ATOMIC FORCE MICROSCOPY;
CHEMICAL BONDS;
FINANCE;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
IMAGING TECHNIQUES;
MECHANISMS;
MICROSCOPIC EXAMINATION;
MICROSYSTEMS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
QUANTUM CHEMISTRY;
SCANNING PROBE MICROSCOPY;
SENSORS;
THICK FILMS;
THIN FILMS;
TRANSDUCERS;
AND DETECTION;
CHARACTERIZATION METHODS;
CHARGE AND DISCHARGING PROCESSES;
CHARGE IMAGING BY ATOMIC FORCE MICROSCOPY;
CHARGING BEHAVIOR;
CHEMICAL-;
CONDUCTION MECHANISMS;
DEPOSITION PARAMETERS;
DIELECTRIC CHARGING;
ELECTRICAL CHARGING;
ELECTRICAL FIELDS;
FAILURE MODES AND MECHANISMS;
FTIR;
INTERNATIONAL CONFERENCES;
MICRO-SWITCHES;
NANO-METER SCALE;
RELIABILITY;
RF MEMS;
SOLID-STATE SENSORS;
TRANSIENT CURRENTS;
FEES AND CHARGES;
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EID: 50049125331
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SENSOR.2007.4300196 Document Type: Conference Paper |
Times cited : (14)
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References (5)
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