Effect of nitridation on the reliability of thick gate oxides

Microelectronics Reliability

Volumn 43, Issue 1, 2003, Pages 43-47

  Wu, C T ^a   Mieckowski, A ^b   Ridley Sr , R S ^c   Dolny, G ^c   Grebs, T ^c   Linn, J ^d   Ruzyllo, J ^a  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c Fairchild Semiconductor Corporation   (United States)

^d INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); NITRIDING; NITROGEN OXIDES; SECONDARY ION MASS SPECTROMETRY;

GATE OXIDES;

MOSFET DEVICES;

EID: 0037224356     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00122-1     Document Type: Article

References (17)

1. Gusev E.P., Lu H.C., Grafunkel E.L., Gustafsson T., Green M.L. Growth and characterization of ultrathin nitrided silicon oxide films. IBM J. Res. Develop. 43:1999;265-286.
2. 2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits J. Appl. Phys. 90:2001;2057-2121.
3. Di Maria D.J., Cartier E., Arnold D. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon. J. Appl. Phys. 73:1993;3367-3384.
4. 2. Semicond. Sci. Technol. 9:1994;989-1004.
5. 2 gate oxides. J. Appl. Phys. 87:2000;498-501.
6. Fukuda H., Murai S., Endoh T., Nomura S. Effect of oxynitridation on charge trapping properties of ultrathin silicon dioxide films. J. Appl. Phys. 81:1997;1825-1828.
7. 2 interfaces. J. Vac. Sci. Technol. B. 14:1996;2832-2839.
8. Morimoto T., Momose H.S., Ozawa Y., Yamabe K., Iwai H. Effects of boron penetration and resultant limitations in ultrathin pure-oxide and nitrided-oxide gate-films. IEDM Tech. Dig. 1990;429-432.
9. + -polysilicon gated MOS device application IEEE Electron. Dev. Lett. 16:1995;319-321.
10. 2O. IEDM Tech. Dig. 1990;421-424.
11. 2O. Appl. Phys. Lett. 63:1993;194-196.
12. 2O): the role of nitric oxide (NO). J. Appl. Phys. 75:1994;1811-1817.
13. z films on Si. J. Electrochem. Soc. 115:1968;311-317.
14. y/Si structures. Appl. Phys. Lett. 47:1985;998-1000.
15. Chang-Liao K.S., Lai H.C. Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide. Appl. Phys. Lett. 72:1998;2280-2282.
16. 2O. Appl. Phys. Lett. 68:1996;1696-1698.
17. 2O oxynitride process. J. Electrochem. Soc. 143:1996;1753-1762.