High-resolution characterization of ultrashallow junctions by measuring in vacuum with scanning spreading resistance microscopy

Applied Physics Letters

Volumn 90, Issue 19, 2007, Pages

  Zhang, L ^a   Ohuchi, K ^a   Adachi, K ^a   Ishimaru, K ^a   Takayanagi, M ^a   Nishiyama, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; MICROSCOPIC EXAMINATION; OPTICAL RESOLVING POWER;

CARRIER PROFILING; NANOSCALE SILICON DEVICES; SCANNING SPREADING RESISTANCE MICROSCOPY; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 34248398050     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736206     Document Type: Article

References (6)

1. Y. Taur, IBM J. Res. Dev. 46, 213 (2002).
2. T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, and K. Suguro, Jpn. J. Appl. Phys., Part 1 41, 2394 (2002).
3. K. Adachi, K. Ohuchi, N. Aoki, H. Tsujii, T. Ito, H. Itokawa, K. Matsuo, K. Suguro, Y. Honguh, N. Tamaoki, K. Ishimaru, and H. Ishiuchi, Tech. Dig. VLSI Symp. 2005, p. 142.
4. H. Tsujii, K. Adachi, K. Ouchi, N. Aoki, T. Ito, K. Matsuo, K. Sugoro, K. Ishimaru, and H. Ishimaru, Extended Abstracts of the 2005 IEEE International Workshop on Junction Technology, Shanghai, P. R. China, IEEE, Piscataway, NJ (2005), p. 107.
5. D. Alvarez, J. Hartwich, M. Fouchier, P. Eyben, and W. Vandervorst, Appl. Phys. Lett. 82, 1724 (2003).
6. K. Maknys, O. Douherets, and S. Anand, Appl. Phys. Lett. 83, 2184 (2003).