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Volumn 46, Issue 4 B, 2007, Pages 2172-2174

Resistance switching characteristics for nonvolatile memory operation of binary metal oxides

Author keywords

Binary metal oxide; Dielectric constant; Resistance random access memory; Resistance switching effect

Indexed keywords

FABRICATION; MAGNETIC FILMS; PERMITTIVITY; RANDOM ACCESS STORAGE; SWITCHING THEORY; TITANIUM DIOXIDE;

BINARY METAL OXIDES; MULTIDEPOSITION FILM FABRICATION; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING EFFECTS;

NONVOLATILE STORAGE;

EID: 34547890352 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.2172 Document Type: Article

Times cited : (60)

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