Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1185-1191

  Sato, Yoshihiro ^a   Tsunoda, Koji ^a   Kinoshita, Kentaro ^a   Noshiro, Hideyuki ^a   Aoki, Masaki ^a   Sugiyama, Yoshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Filamentary conductance; Memory circuit; Resistive memory; Resistive random access memory (ReRAM)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; NICKEL OXIDE; RANDOM ACCESS STORAGE; SEMICONDUCTOR MATERIALS;

CURRENT LIMIT; FILAMENTARY CONDUCTANCE; NICKEL OXIDE RESISTIVE MEMORY; RESET CURRENT; RESISTIVE RANDOM ACCESS MEMORY (RERAM);

MOSFET DEVICES;

EID: 43749088059     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.919385     Document Type: Article

References (17)

1. H. Pagina and N. Sotnik, "Bistable switching in electrotormed metal-insulator-metal devices", Phys. Stat. Sol. A, vol. 108, no. 1, pp. 11-65, Jul. 1988.
2. S. Q. Liu, N. J. Wu, and A. Ignatiev, "Electric-pulse-induced reversible resistance change effect in magnetoresistive films," Appl. Phys. Lett., vol. 76, no. 19, pp. 2749-2751, May 2000.
3. 3 single crystals," Appl. Phys. Lett., vol. 78, no. 23, pp. 3738-3740, Jun. 2001.
4. A. Beack, J. G. Bednorz, C. Gerber, C. Rossel, and and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, Jul. 2000.
5. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., 2004, pp. 587-590.
6. B. N. Engel, J. Akerman, B. Butcher, K. W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, "A 4-Mb toggle MRAM based on a novel bit and switching method," IEEE Trans. Magn., vol. 41 no. 1, pp. 132-136, Jan. 2005.
7. S. Kawashima, T. Endo, A. Yamamoto, K. Nakabayashi, M. Nakazawa, K. Morita, and M. Aoki,, "Bitline GND sensing technique for low-voltage operation FeKAM," IEEE J. Solid-State Circuits, vol. 37, no. 5, pp. 592-598, May 2002.
8. S. Kang, W. Y. Cho, B. Cho, K. Lee, C. Lee, H. Oh, B. Choi, Q. Wang, H. Kim, M. Park, Y. Ro, S. Kim, C. Ha, K. Kim, Y. Kim, D. Kim, C. K. Byun, G. Jeong, H. Jeong, K. Kim, Y. S. Kim, D. Kim, 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) with 66-MHz synchronous burst-read operation," IEEE J. Solid-State Circuits, vol. 42, no. 1, pp. 210-218, 2007.
9. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, "Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxide, " Jpn. J. Appl. Phys., vol. 45, no. 37, pp. 991-994, 2006.
10. T. Fang, S. Kaza, S. Haddad, A. Chen, Y. Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi, "Erase mechanism for copper oxide resistive switching memory cells with nickel electrode," in IEDM Tech. Dig., 2006, pp. 789-792.
11. Y. hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, H. Inoue, H. Shima, H. Akinaga, H. Takagi. H. Akoh. and Y. Tokura. "High speed unipolar switching resistance RAM (RRAM) technology," in IEDM Tech. Dig., 2006, pp. 793-796.
12. A. Chen, S. Haddad, Y. Wu, T. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi, "Non-volatile resistive switching for advanced memory applications," in IEDM Tech. Dig., 2005, pp. 746-749.
13. I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung. J. T. Moon, and B. I. Ryu, "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application," in IEDM Tech. Dig., 2005, pp. 750-753.
14. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park "Conductivity switching characteristics and reset currents in NiO films," Appl. Phys. Lett., vol. 86, no. 9, p. 093 509, Feb. 2005.
15. 2 thin films grown by atomic-layer deposition," J. Appl. Phys., vol 98, no. 3, p. 033 715, Aug. 2005.
16. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, "Bias polarity dependent data retention ol resistive random access memory consisting of binary transition metal oxide," Appl. Phys. Lett., vol. 89, no. 10, p. 103 509, Sep. 2006.
17. Y. Sato, K. Kinoshita, M. Aoki, and Y. Sugiyama, "Consideration of switching mechanism of binary metal oxide resistive junction using a thermal reaction model," Appl. Phys. Lett., vol. 90, no. 3, p. 033 503, Jan. 2007.