Bipolar resistive switching in oxides for memory applications

Thin Film Metal-Oxides: Fundamentals and Applications in Electronics and Energy

Volumn , Issue , 2010, Pages 131-167

  Bruchhaus, Rainer ^a   Waser, Rainer ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78649374219     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-0664-9_4     Document Type: Chapter

References (79)

1. Wuttig M, Yamada Y (2007 Phase-change materials for rewriteable data storage. Nat Mater 6:824
2. Waser R (2008 Electrochemical and thermochemical memories. IEDM Tech Digest 289
3. Kozicki MN, Park M, Mitkova M (2005 Nanoscale memory elements based on solid-state electrolytes. IEEE Trans Nanotechnol 4:331
4. Kund M, Beitel G, Pinnow C-U, Roehr T, Schumann J, Symanczyk R, Ufert K-D, Mueller G (2005 Conductive bridging RAM (CBRAM: an emerging non-volatile memory technology scalable to sub 20 nm. IEDM Tech Digest 754
5. Waser R, Aono M (2007 Nanoionics-based resistive switching memories. Nat Mater 6:833
6. Hickmott TW (1962 Low-frequency negative resistance in thin anodic oxide films. J Appl Phys 33:2669
7. Gibbons JF, Beadle WE (1964 Switching properties of thin NiO films. Solid-State Electron 7:785
8. Simmons JG, Verderber RR (1967 New conduction and reversible memory phenomena in thin insulating films. Proc R Soc London Ser A 301:77
9. Dearnaley G, Stoneham AM, Morgan DV (1970 Electrical phenomena in amorphous oxide films. Rep Prog Phys 33:1129
10. Oxley DP (1977 Electroforming, switching and memory effects in oxide thin films. Electro-component Sci Technol UK 3:217
11. Pagnia H, Sotnik N (1988 Bistable switching in electroformed metal-insulator-metal devices. Phys Stat Sol 108:11
12. Hiatt WR, Hickmott TW (1965 Bistable switching in niobium oxide diodes. Appl Phys Lett 6:106
13. Beck A, Bednorz JG, Gerber C, Rossel C, Widmer D (2000 Reproducible switching effect in thin oxide films for memory applications. Appl Phys Lett 77:139
14. Liu SQ, Wu NJ, Ignatiev A (2000 Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl Phys Lett 76:2749
15. Baiatu T, Waser R, Haerdtl KH (1990 DC electrical degradation of perovskite-type titanates: III. A model of the mechanism. J Amer Ceram Soc 73:1663
16. Sawa A (2008 Resistive switching in transition metal oxides. Materials Today 11(6:28
17. 3 films. J Appl Phys 47:2767
18. Kinoshita K, Noshiro H, Yoshida C, Sato Y, Aoki M, Sugiyama Y (2008 Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model. J Mater Res 23:812
19. Baek IG, Lee MS, Seo S, Lee MJ, Seo DH, Suh D-S, Park JC, Park SO, Kim HS, Yoo IK, Chung U-I, Moon JT (2004 Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. IEDM Tech Digest 587
20. Meyer R, Schloss L, Brewer J, Lambertson R, Kinney W, Sanchez J, Rinerson D (2008 Oxide dual-layer memory element for scalable non-volatile cross-point memory technology. NVMTS Proc. p. 1
21. McPherson JW, Kim J, Shanware A, Mogul H, Rodriguez J (2003 Trends in the ultimate breakdown strength of high dielectric-constant materials. IEEE Trans Electron Dev 50(8:1771
22. 0:3MnO3-metal heterostructures. Appl Phys Lett 92:202102
23. 0:3MnO3 interface. Appl Phys Lett 83:957
24. 0:3MnO3 interface. Appl Phys Lett 85:4073
25. 0:01O3. Appl Phys Lett 86:012107
26. xMnO3 with controlled charge-ordering instability. Phys Rev B 53:R1689
27. Tomioka Y, Tokura Y (2004 Global phase diagram of perovskite manganites in the plane of quenched disorder versus one-electron bandwidth. Phys Rev B 70:014432
28. Sawa A, Fujii T, Kawasaki M, Tokura Y (2006 Interface resistance switching at a few nanometer thick perovskite manganite active layers. Appl Phys Lett 88:232112
29. xO3.0:0002 < x < 0:02/Schottky junctions. Phys Rev B 75:165101
30. z. Phys Rev B 51:6143
31. xO-metal heterostructures. Appl Phys Lett 90:042107
32. i/Nb-doped SrTiO3 heterojunction. Appl Phys Lett 91:183502
33. xMnO4 interfaces. Appl Phys Lett 88:223507
34. 0:3MnO3 thin film at room temperature. Phys Rev B 70:224403
35. Janousch M, Meijer GI, Staub U, Delley B, Karg SF, Andreasson BP (2007 Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory. Adv Mat 19:2232
36. Rozenberg MJ, Inoue IH, Sanchez MJ (2004 Nonvolatile memory with multilevel switching: a basic model. Phys Rev Lett 92:178302
37. Frederikse HPR, Thurber WR, Hosler R (1964 Electronic transport in strontium titanate. Phys Rev 134:A442
38. Szot K, Speier W, Bihlmayer G, Waser R (2006 Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater 5:312
39. 3. Phys Rev Lett 88:75508
40. 3. Appl Phys Lett 60:1190
41. Yamada H, Miller GR (1973 Point defects in reduced strontium titanate. J Solid State Chem 6:169
42. 3 thin films. Phys Stat Solidi (RRL 1:R86
43. Yang YY, Pickett MD, Li X, Ohlberg DAA, Stewart DR, Williams RS (2008 Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotech 3:429
44. Inoue H, Yasuda S, Akinaga H, Tagaki H (2008 Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution. Phys Rev B 77:035105
45. 3. Appl Phys Lett 93:023110
46. 3 thin films with Nb doping. J Appl Phys 76:5886
47. Leitner A, Rogers CT, Prize JC, Rudman DA, Herman DR (1998 Pulsed laser deposition of superconducting Nb-doped strontium titanate thin films. Appl Phys Lett 72:3065
48. 3 sensors: I, basic model for a fast sensor response. Sens Actuators B 101:335
49. C-Si investigated with conductive atomic force microscopy. J Vac Sci Technol B22:2030
50. 2 crystals. Appl Phys Lett 91:112101
51. 2 thin films. Appl Phys Lett 86:262907
52. 2 thin films. Appl Phys Lett 91:012907
53. 2 films. Appl Phys Lett 90:113501
54. 2 thin films grown by atomic-layer deposition. J Appl Phys 98:033715
55. 2/Pt stack. Electrochem Solid-State Lett 10:G51
56. 2 anatase nanolayer on tin thin film exhibiting high-speed bipolar resistive switching. Appl Phys Lett 89:223509
57. 2/TiN nano-crystalline thin film. Jpn J Appl Phys 2 11:L310
58. 3/Pt devices. Appl Phys Lett 93:043502
59. 2 polycrystalline films. Surface Coat Tech 202:1319
60. Muraoka S, Osano K, Kanzawa Y, Mitani S, Fujii S, Katayama K, Katoh Y, Wie Z, Mikawa T, Arita K, Kawashima Y, Azuma R, Kawai K, Shimakawa K, Odagawa A, Takagi T (2007 Fast switching and long retention Fe-O ReRAM and its switching mechanism. IEDM Tech Dig 779
61. Odagawa A, Katoh Y, Kanzawa Y, Wei Z, Mikawa T, Muraoka S, Takagi T (2007 Electroform-ing and resistance-switching mechanism in a magnetite thin film. Appl Phys Lett 91:133503
62. x reram and direct evidence of redox reaction mechanism. IEDM Tech Digest 293
63. Chen A, Haddad S, Wu Y-C, Fang T-N, Lan Z, Avanzino S, Pangrle S, Buynoski M, Rathor M, Cai W, Tripsas N, Bill C, VanBuskirk M, Taguchi M (2005 Non-volatile resistive switching for advanced memory applications. IEDM Tech Digest 765
64. Chen A, Haddad S, Wu YC, Lan Z, Fang TN, Kaza S (2007 Switching characteristics of Cu2O metal-insulator-metal resistive memory. Appl Phys Lett 91:123517
65. Yang W-Y, Kim W-G, Rhee SW (2008 Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching properties. Thin Solid Films 517:967
66. Rakhshani AE (1991 The role of space-charge-limited-current conduction in evaluation of the electrical properties of thin Cu2O films. J Appl Phys 69:2365
67. Hasan M, Dong R, Choi HJ, Lee DS, Seong DJ, Pyun MB, Hwang H (2008 Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate. Appl Phys Lett 93:052908
68. Schindler C, Thermadam SCP, Waser R, Kozicki MN (2007 Bipolar and unipolar resistive switching in Cu-doped SiO2. IEEE Trans Electron Dev 54:2762
69. Kozicki MN, Gopalan C, Balakrishnan M, Mitkova M (2006 A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte. IEEE Trans Nanotechn 5:535
70. x films using Ti[OCH(CH32]4. J Electrochem Soc 154:G134
71. Chudnovskii FA, Odynets LL, Pergament AL, Stefanovich GB (1996 Electroforming and switching in oxides of transition metals: The role of metal-insulator transition in the switching mechanism. J Solid State Chem 122:95
72. Waser R (ed (2003 Nanoelectronics and information technology, 2nd edn. Wiley-VCH, Weinheim
73. Wu W, Jung GY, Olynick DL, Straznicki J, Li Z, Li X, Ohlberg DAA, Chen Y, Wang S-Y, Liddle JA, Tong WM, Williams RS (2005 One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Appl Phys A 80:1173
74. 11 bits per square centimeter. Nature 445:414
75. Kinoshita K, Tamura T, Aoki M, Sugiyama Y, Tanaka H (2006 Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides. Jpn J Appl Phys 45:L991
76. Nakagome Y, Horiguchi M, Kawahara T, Ito K (2003 Review and future prospects of low-voltage RAM circuits. IBM J Res Dev 47:525
77. Ignatiev A, Wu NJ, Chen X, Liu SQ, Papagianni C, Strozier J (2006 Resistance switching in perovskite thin films. Phys Stat Sol B 243:2089
78. Serin N, Serin T, Horzum S, Celik Y (2005 Annealing effects on the properties of copper oxide thin films prepared by chemical deposition. Semicond Sci Technol 20:398
79. Zhirnov VV, Cavin III, RK, Hutchby JA, Bourianoff GI (2003 Limits to binary logic switch scaling-a gedanken model. Proc IEEE USA 91:1934