Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method

Applied Physics Letters

Volumn 94, Issue 1, 2009, Pages

  Eriguchi, Koji ^a   Wei, Zhiqiang ^b   Takagi, Takeshi ^b   Ohta, Hiroaki ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE;

CONDUCTION MECHANISMS; CONSTANT VOLTAGE STRESSES; FUNDAMENTAL MECHANISMS; INDUCED RESISTANCES; OHMIC TRANSPORTS; POLARITY DEPENDENCES; REACTION MECHANISMS; RESISTANCE INCREASES; SPUTTERING PROCESSES; STRESS VOLTAGES; SWITCHING BEHAVIORS;

VENDING MACHINES;

EID: 58149504118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3064127     Document Type: Article

References (15)

1. M. Fujimoto, H. Koyama, Y. Hosoi, K. Ishihara, and S. Kobayashi, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.45.L310 45, L310 (2006).
2. U. Russo, D. Ielmini, C. Cagil, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, Tech. Dig.-Int. Electron Devices Meet. 2007, 775. 0021-4922
3. K. Tsunoda, K. Kinoshita, H. Nishiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, Tech. Dig.-Int. Electron Devices Meet. 2007, 767.
4. H. Shima, F. Takano, Y. Tamai, H. Akinaga, and I. H. Inoue, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.46.L57 46, L57 (2007).
5. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M.-J. Lee, S.-A. Seo, and I. K. Yoo, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2005.854397 26, 719 (2005).
6. S. Muraoka, K. Osano, Y. Kanzawa, S. Mitani, S. Fujii, K. Katayama, Y. Katoh, Z. Wei, T. Mikawa, K. Arita, Y. Kawashima, R. Azuma, K. Kawai, K. Shimakawa, A. Odagawa, and T. Takagi, Tech. Dig.-Int. Electron. Devices Meet. 2007, 779. 0021-4922
7. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. -S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. -I. Cung, and J. T. Moon, Tech. Dig.-Int. Electron. Devices Meet. 2004, 587. 0021-4922
8. M. J. Rozenberg, I. H. Inoue, and M. J. Sanchez, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.178302 92, 178302 (2004).
9. J. W. McPherson and D. A. Baglee, J. Electrochem. Soc. 0013-4651 10.1149/1.2114251 132, 1903 (1985).
10. J. W. McPherson and H. C. Mogul, J. Appl. Phys. 0021-8979 10.1063/1.368217 84, 1513 (1998).
11. K. Eriguchi and Y. Kosaka, IEEE Trans. Electron Devices 0018-9383 10.1109/16.658825 45, 160 (1998).
12. K. Eriguchi and M. Niwa, IEEE Electron Device Lett. 0741-3106 10.1109/55.728892 19, 399 (1998).
13. K. Eriguchi and M. Niwa, Appl. Phys. Lett. 0003-6951 10.1063/1.122343 73, 1985 (1998).
14. K. Eriguchi, Y. Harada, and M. Niwa, J. Appl. Phys. 0021-8979 10.1063/1.372125 87, 1990 (2000).
15. A. Berman, IEEE Proceedings of the International Reliability Physics Symposium, 1981, p. 204.