Modeling of set/reset operations in NiO-based resistive-switching memory devices

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1712-1720

  Cagli, Carlo ^a   Nardi, Federico ^a   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Nonvolatile memories; Resistive switching memory (RRAM); Transition metal oxide

Indexed keywords

ANALYTICAL MODEL; BACK-END INTEGRATION; CONDUCTIVE FILAMENTS; DATA RETENTION; EXPERIMENTAL DATA; NONVOLATILE MEMORIES; NUMERICAL MODELS; OPERATING CONDITION; PHYSICS-BASED; PROGRAMMING VOLTAGE; PULSE CONDITION; READ DISTURB; RELIABILITY PREDICTION; RESISTIVE SWITCHING MEMORIES; RESISTIVE-SWITCHING MEMORY (RRAM); SIMULATION RESULT; THERMALLY DRIVEN; THRESHOLD SWITCHING; TRANSITION METAL OXIDE; VOLTAGE STRESS;

COMPUTER SIMULATION; DISSOLUTION; ELECTRIC POTENTIAL; METAL RECOVERY; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

SWITCHING;

EID: 68349158917     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2024046     Document Type: Article

References (41)

1. G. Atwood, "Future directions and challenges for ETOX Flash memory scaling," IEEE Trans. Device Mater. Rel., vol. 4, no. 3, pp. 301-305, Sep. 2004.
2. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007.
3. I. Baek, M. Lee, S. Seo, M. Lee, D. Seo, D.-S. Suh, J. Park, S. Park, H. Kim, I. Yoo, U.-I. Chung, and J. Moon, "Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., 2004, pp. 587-590.
4. T.-N. Fang, S. Kaza, S. Haddad, A. Chen, Y.-C. Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi, S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi, "Erase mechanism for copper oxide resistive switching memory cells with nickel electrode," in IEDM Tech. Dig., 2006, pp. 789-792.
5. Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, and Y. Tokura, "High speed unipolar switching resistance RAM (RRAM) technology," in IEDM Tech. Dig., 2006, pp. 793-796.
6. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, "Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM," in IEDM Tech. Dig., 2007, pp. 775-778.
7. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 186-192, Feb. 2009.
8. J. Billen, S. Steudel, R. Müller, J. Genoe, and P. Heremans, "A comprehensive model for bipolar electrical switching of CuTCNQ memories," Appl. Phys. Lett., vol. 91, no. 26, p. 263 507, Dec. 2007.
9. T. Kever, U. Böttger, C. Schindler, and R. Waser, "On the origin of bistable resistive switching in metal organic charge transfer complex memory cells," Appl. Phys. Lett., vol. 91, no. 8, p. 083 506, Aug. 2007.
10. M. Kund, G. Beitel, C.-U. Pinnow, T. Röhr, J. Schumann, R. Symanczyk, K.-D. Ufert, and G. Müller, "Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20 nm," in IEDM Tech. Dig., 2005, pp. 754-757.
11. M. N. Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, "A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte," IEEE Trans. Nanotechnol., vol. 5, no. 5, pp. 535-544, Sep. 2006.
12. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Kozicki, "Study of multilevel programming in programmable metallization cell (PMC) memory," IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1040-1047, May 2009.
13. D. Kamalanathan, U. Russo, D. Ielmini, and M. N. Kozicki, "Voltage-driven on-off transition and tradeoff with program and erase current in programmable metallization cell (PMC) memory," IEEE Electron Device Lett., vol. 30, no. 5, pp. 553-555, May 2009.
14. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, no. 7191, pp. 80-83, May 2008.
15. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices," Nat. Nanotechnol., vol. 3, no. 7, pp. 429-433, Jul. 2008.
16. 2," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2762-2768, Oct. 2007.
17. D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Electrical observations of filamentary conductions for the resistive memory switching in NiO films," Appl. Phys. Lett., vol. 88, no. 20, p. 202 102, May 2006.
18. J.-B. Yun, S. Kim, S. Seo, M.-J. Lee, D.-C. Kim, S.-E. Ahn, Y. Park, J. Kim, and H. Shin, "Random and localized resistive switching observation in Pt/NiO/Pt," Phys. Stat. Sol. (RRL), vol. 1, no. 6, pp. 280-282, 2007.
19. 2 thin films," Appl. Phys. Lett., vol. 90, no. 24, p. 242 906, Jun. 2007.
20. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, "Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3 V," in IEDM Tech. Dig., 2007, pp. 767-770.
21. C. Cagli, D. Ielmini, F. Nardi, and A. L. Lacaita, "Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction," in IEDM Tech. Dig., 2008, pp. 301-304.
22. D. Ielmini, D. Mantegazza, A. L. Lacaita, F. Pellizzer, and A. Pirovano, "Switching and programming dynamics in phase-change memory cells," Solid State Electron., vol. 49, no. 11, pp. 1826-1832, Nov. 2005.
23. D. Ielmini, "Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses," Phys. Rev. B, Condens. Matter, vol. 78, no. 3, p. 035 308, Jul. 2008.
24. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.
25. S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G. Tallarida, H. L. Lu, M. Alia, F. G. Volpe, and M. Fanciulli, "Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition," Microelectron. Eng., vol. 85, no. 12, pp. 2414-2419, Dec. 2008.
26. K. Jung, H. Seo, Y. Kim, H. Im, J. Hong, J.-W. Park, and J.-K. Lee, "Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films," Appl. Phys. Lett., vol. 90, no. 5, p. 052 104, Jan. 2007.
27. S. R. Lee, K. Char, D. C. Kim, R. Jung, S. Seo, X. S. Li, G.-S. Park, and I. K. Yoo, "Resistive memory switching in epitaxially grown NiO," Appl. Phys. Lett., vol. 91, no. 20, p. 202 115, Nov. 2007.
28. D. Ielmini, D. Mantegazza, A. L. Lacaita, A. Pirovano, and F. Pellizzer, "Parasitic reset in the programming transient of PCMs," IEEE Electron Device Lett., vol. 26, no. 11, pp. 799-801, Nov. 2005.
29. D. Ielmini and Y. Zhang, "Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices," J. Appl. Phys., vol. 102, no. 5, p. 054 517, Sep. 2007.
30. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, "Threshold switching in chalcogenide-glass thin films," J. Appl. Phys., vol. 51, no. 6, pp. 3289-3309, Jun. 1980.
31. S. Lavizzari, D. Ielmini, D. Sharma, and A. L. Lacaita, "Transient effects of delay, switching and recovery in phase change memory (PCM) devices," in IEDM Tech. Dig., 2008, pp. 215-218.
32. C. H. Tung, K. L. Pey, W. H. Lin, and M. K. Radhakrishnan, "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs," IEEE Electron Device Lett., vol. 23, no. 9, pp. 526-528, Sep. 2002.
33. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and C. H. Tung, "Dielectric breakdown mechanisms in gate oxides," J. Appl. Phys., vol. 98, no. 12, p. 121 301, Dec. 2005.
34. P. Fantini, G. Betti Beneventi, A. Calderoni, L. Larcher, P. Pavan, and F. Pellizzer, "Characterization and modelling of low-frequency noise in PCM devices," in IEDM Tech. Dig., 2008, pp. 219-222.
35. E. Y. Wu and R.-P. Vollertsen, "On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination - Part I: Theory, methodology, experimental techniques," IEEE Trans. Electron Devices, vol. 49, no. 12, pp. 2131-2140, Dec. 2002.
36. E. Pop, "The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes," Nanotechnology, vol. 19, no. 29, p. 295 202, Jun. 2008.
37. E. Pop, S. Dutta, D. Estrada, and A. Liao, "Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors," in Proc. IRPS, 2009, pp. 405-408.
38. S. O. Kasap and S. Yannacopoulos, "Kinetics of structural relaxations in glassy semiconductor a-Se," J. Mater. Res., vol. 4, no. 4, pp. 893-905, Jul. 1989.
39. 5 films," J. Appl. Phys., vol. 89, no. 6, pp. 3168-3176, Mar. 2001.
40. Y. Sato, K. Tsunoda, K. Kinoshita, H. Noshiro, M. Aoki, and Y. Sugiyama, "Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET," IEEE Trans. Electron Devices, vol. 55, no. 5, pp. 1185-1191, May 2008.
41. x brought about by reducing a parasitic capacitance," Appl. Phys. Lett., vol. 93, no. 3, p. 033 506, Jul. 2008.