High speed unipolar switching resistance RAM (RRAM) technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Hosoi, Y ^a   Tamai, Y ^a   Ohnishi, T ^a   Ishihara, K ^a   Shibuya, T ^a   Inoue, Y ^a   Yamazaki, S ^a   Nakano, T ^a   Ohnishi, S ^a   Awaya, N ^a   Inoue, I H ^b   Shima, H ^b   Akinaga, H ^b   Takagi, H ^b   Akoh, H ^b   Tokura, Y ^b  

^a SHARP CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NITRIDES; RESISTORS; TITANIUM;

HIGH SPEEDS; HIGH-DENSITY; MEMORY ARRAYS; NANO-SECONDS; SERIES RESISTORS; SWITCHING CHARACTERISTICS; TITANIUM OXY-NITRIDE; UNIPOLAR OPERATION;

SPEED;

EID: 46049084215     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346732     Document Type: Conference Paper

References (6)

1. G. Dearnaley et al., Rep. Prog. Phys. 33, pp. 1129-1191, 1970.
2. S. Q. Liu et al., Appl. Phys. Lett. Vol. 76, pp. 2749-2751, 2000.
3. W. W. Zhuang et al., in IEDM Tech. Dig., 2002, pp. 193-196.
4. I. G. Baek et al., in IEDM Tech. Dig., 2004, pp. 587-590.
5. M.Fujimoto et al., Jpn. J. Appl. Phys. Vol. 45, No. 11, L310, 2006.
6. H. I. Inoue et al., in Proc. NVMTS, Nov. 2005, pp. 131-136.