Study on the dynamic resistance switching properties of NiO thin films

Thin Solid Films

Volumn 518, Issue 8, 2010, Pages 2258-2260

  Kugeler C ^a   Weng, R ^a   Schroeder, H ^a   Symanczyk, R ^b   Majewski, P ^b   Ufert, K D ^b   Waser, R ^a,c   Kund, M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Nickel oxide; Resistive random access memory; Unipolar resistive switching

Indexed keywords

CONTACT SIZE; DYNAMIC RESISTANCE; ELECTRICAL CHARACTERIZATION; LOW OPERATING VOLTAGE; MEMORY CELL; NIO THIN FILM; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING PERFORMANCE; TEST STRUCTURE; UNIPOLAR OPERATION; UNIPOLAR RESISTIVE SWITCHING;

NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SWITCHING; SWITCHING SYSTEMS;

NICKEL OXIDE;

EID: 73949083907     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.040     Document Type: Letter

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