RESET mechanism of TiOx resistance-change memory device

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 733-735

  Wang, Wei ^a   Fujita, Shinobu ^b   Wong, S Simon ^a  

^a Stanford University   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Bipolar switching; Reset; Resistance change memory; Titanium oxide (TiOx); Unipolar switching

Indexed keywords

BIPOLAR SWITCHING; CONDUCTIVE FILAMENTS; DATA SUPPORT; MEMORY DEVICE; PHYSICAL MECHANISM; RESET; RESISTANCE-CHANGE MEMORY; STATISTICAL DISTRIBUTION; SWITCHING MODES; SWITCHING PARAMETERS; THERMAL DISSOLUTION; UNIPOLAR SWITCHING;

DISSOLUTION; REDOX REACTIONS; TITANIUM; TITANIUM OXIDES;

SWITCHING;

EID: 67650621591     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2021001     Document Type: Article

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