X-ray metrology for advanced microelectronics

EPJ Applied Physics

Volumn 49, Issue 2, 2010, Pages

  Wyon, C ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

IN-LINE METROLOGY; ION IMPLANT; LONG TERM STABILITY; MANUFACTURING LINES; METROLOGY METHODS; MIM CAPACITORS; MOS TRANSISTORS; WEAK INTERACTIONS; X RAY DATA; X-RAY DETECTOR; X-RAY FOCUSING OPTICS; X-RAY METROLOGY; X-RAY SOURCES; X-RAY TECHNIQUES;

GATE DIELECTRICS; GATES (TRANSISTOR); MANUFACTURING DATA PROCESSING; MEASUREMENTS; MICROELECTRONICS; MIM DEVICES; SILICON COMPOUNDS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; X RAY APPARATUS;

X RAYS;

EID: 77249108394     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2009211     Document Type: Review

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