High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 245-250

  Cohen, G M ^a   Mooney, P M ^a   Park, H ^a   Cabral Jr , C ^a   Jones, E C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; AMORPHOUS SILICON; GATES (TRANSISTOR); ION IMPLANTATION; MOSFET DEVICES; MULTILAYERS; RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SILICIDATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0037252549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527217     Document Type: Article

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