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Chemistry of Materials

Volumn 14, Issue 4, 2002, Pages 1845-1852

Structural comparison of hydrogen silsesquioxane based porous low-k thin films prepared with varying process conditions

(6) Lee, Hae Jeong a Lin, Eric K a Wang, Howard a Wu, Wen Li a Chen, Wei b Moyer, Eric S b

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b Semiconductor Fabrication Materials (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN;

ARTICLE; CHEMICAL BOND; DIELECTRIC CONSTANT; FILM; INFRARED SPECTROSCOPY; NEUTRON SCATTERING; POROSITY; REFLECTOMETRY; SEMICONDUCTOR; STRUCTURE ANALYSIS; THICKNESS;

EID: 0036121441 PISSN: 08974756 EISSN: None Source Type: Journal
DOI: 10.1021/cm011569h Document Type: Article

Times cited : (85)

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