Toward next high performances MIM generation: Up to 30fF/μm2 with 3D architecture and high-k materials

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 997-1000

  Jeannot, S ^a   Bajolet, A ^a   Manceau, J P ^a   Cremer S ^a   Deloffre, E ^a   Oddou, J P ^a   Perrot, C ^a   Benoit, D ^a   Richard, C ^a   Bouillon, P ^a   Bruyere S ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES;

METAL-INSULATOR-METAL CAPACITORS;

PAPER CAPACITORS;

EID: 50249116133     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419122     Document Type: Conference Paper

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