Characterization of HfSiON gate dielectrics using monoenergetic positron beams

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Uedono, A ^a,c   Ikeuchi, K ^a   Otsuka, T ^a   Shiraishi, K ^a,c   Yamabe, K ^a,c   Miyazaki, S ^b   Umezawa, N ^c   Hamid, A ^c,g   Chikyow, T ^c   Ohdaira, T ^d   Muramatsu, M ^d   Suzuki, R ^d   Inumiya, S ^e   Kamiyama, S ^e   Akasaka, Y ^e   Nara, Y ^e   Yamada, K ^c,f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^f WASEDA UNIVERSITY   (Japan)

^g Helwan University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); NITRIDES; PLASMA THEORY; POSITRONS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

AMORPHOUS STRUCTURE; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; MONOENERGETIC POSITRON BEAMS;

HAFNIUM COMPOUNDS;

EID: 33645238435     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178657     Document Type: Article

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