Synchrotron measurement of the effect of dielectric porosity and air gaps on the stress in advanced Cu/low-k interconnects

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 72-74

  Wilson, C J ^a,b   Zhaoa, C ^a   Zhaoc, L ^c   Tökei, Zs ^a   Croesa, K ^a   Pantouvakia, M ^a   Beyera, G P ^a   Horsfallb, A B ^b   O'Neill, A G ^b  

^a IMEC   (Belgium)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c Intel Corporation Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AIR GAP STRUCTURES; AIR-GAPS; CU-INTERCONNECTS; CU/LOW-K INTERCONNECTS; FINITE ELEMENT MODELS; FUTURE TECHNOLOGIES; HIGH POROSITY; IN-PLANE; LOWER STRESS; NARROW LINES; RELIABILITY FAILURE; SYNCHROTRON MEASUREMENTS; ULTRA-LOW-K DIELECTRICS;

DIELECTRIC MATERIALS; OPTICAL INTERCONNECTS; TEMPERATURE CONTROL;

POROSITY;

EID: 70349466803     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090343     Document Type: Conference Paper

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