Characterization of silicon-on-insulator structures by high-resolution x-ray diffraction

Journal of the Electrochemical Society

Volumn 149, Issue 8, 2002, Pages

  Antonova, I V ^a   Popov, V P ^a   Bak Misiuk, J ^b   Domagala, J Z ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; INTERFACES (MATERIALS); ION IMPLANTATION; LATTICE CONSTANTS; SILICON WAFERS; STRAIN RATE; X RAY DIFFRACTION ANALYSIS;

CZOCHRALSKI GROWN SILICON; HIGH RESOLUTION X RAY DIFFRACTION; HYDROGEN RELATED DEFECT; RADIATION DEFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036687796     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1489688     Document Type: Article

References (10)