Leakage current mechanism of amorphous and polycrystalline Ta2O5 films grown by chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 977-983

  Aoyama, Tomonori ^a   Saida, Shigehiko ^a   Okayama, Yasunori ^a   Fujisaki, Masanori ^a   Imai, Keitaro ^a   Arikado, Tsunetoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FILM GROWTH; HYDROGEN; IMPURITIES; LEAKAGE CURRENTS; OXIDATION; PLASMAS; POLYCRYSTALLINE MATERIALS; SILICON;

OXYGEN PLASMA; POLYSILICON ELECTRODE; POOLE-FRENKEL TYPE LEAKAGE CURRENT; TANTALUM OXIDE;

TANTALUM COMPOUNDS;

EID: 0030106125     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836568     Document Type: Article

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