Silicide pre-clean effects on NiPtSi thermal stability for 65 nm technologies and beyond

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2528-2532

  Bonnetier, Susana ^a   Imbert, Bruno ^b   Hopstaken, Marco ^b   Galpin, David ^c   Gwoziecki, Romain ^d   Barge, David ^b   Zoll, Stéphane ^c   Anilturk, Onder ^a   Sicurani, Emmanuel ^c   Caillat, Christian ^c   Barr, Alex ^a   Gonella, Roberto ^c   Espinoux, Yannick ^c   Mur, Pierre ^d   Mayet, Nicolas ^a   Gotti, Andrea ^c   Basso, Marie Thérèse ^c  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b NXP SEMICONDUCTORS   (France)

^c STMICROELECTRONICS   (France)

^d MINATEC   (France)

Author keywords

Fluorine; Nickel silicide; Surface preparation; Thermal stability

Indexed keywords

ARGON; DEPOSITS; ELLIPSOMETRY; FLUORINE; SPUTTER DEPOSITION;

ARGON SPUTTER ETCH; ELECTRICAL PERFORMANCE MEASUREMENTS; REMOTE PLASMA PRE-CLEAN; VOLTAGE CONTRAST (ES25) TESTING;

THERMODYNAMIC STABILITY;

EID: 34548846638     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.028     Document Type: Article

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