Angle-resolved photoelectron spectroscopy on gate insulators

Microelectronics Reliability

Volumn 47, Issue 1, 2007, Pages 20-26

  Hattori, T ^a   Nohira, H ^a   Shinagawa, S ^a   Hori, M ^b   Kase, M ^b   Maruizumi, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENTROPY; GATES (TRANSISTOR); INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; STRUCTURE (COMPOSITION); THIN FILMS;

INTERFACE NITRIDATION; NITROGEN ATOM; ULTRATHIN OXYNITRIDE FILMS;

ELECTRIC INSULATORS;

EID: 33845395322     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.03.003     Document Type: Article

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