Comparison of direct-total-reflection X-ray fluorescence, sweeping-total-reflection X-ray fluorescence and vapor phase decomposition-total-reflection X-ray fluorescence applied to the characterization of metallic contamination on semiconductor wafers

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 63, Issue 12, 2008, Pages 1375-1381

  Danel, Adrien ^a   Cabuil, Nicolas ^b   Lardin, Thierry ^a   Despois, Dominique ^b   Veillerot, Marc ^a   Geoffroy, Charles ^c   Yamagami, Motoyuki ^d   Kohno, Hiroshi ^d  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c Elexience   (France)

^d RIGAKU CORPORATION   (Japan)

Author keywords

Metallic contamination; Silicon wafer; TXRF

Indexed keywords

CHEMICAL ELEMENTS; CONTAMINATION; FLUORESCENCE; HEAVY METALS; INTEGRATED CIRCUITS; METALS; PRECIOUS METALS; PRODUCTION ENGINEERING; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL TO NOISE RATIO; SILICON; SILICON WAFERS; TRACE ELEMENTS; TRANSITION METALS; VAPOR PHASE EPITAXY; VAPORS; X RAYS;

COMMERCIAL EQUIPMENTS; CRITICAL ANGLES; INCIDENT ANGLES; LIGHT ELEMENTS; MANUFACTURING IS; MASS PRODUCTIONS; METALLIC CONTAMINATION; NOBLE METALS; PILOT LINES; QUANTITATIVE ANALYSIS; SEMI-CONDUCTOR WAFERS; SI WAFERS; SIGNAL TO NOISE; SILICON WAFER; SOLID PARTICLES; SURFACE COVERAGES; TXRF; ULTRA TRACES; VAPOR-PHASE; VAPOR-PHASE DECOMPOSITIONS; X-RAY FLUORESCENCES;

LIGHT REFLECTION;

EID: 59349084688     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2008.10.031     Document Type: Article

References (13)

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