Anticipation of nitrided oxides electrical thickness based on XPS measurement

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 181-183

  Bienacel, J ^a   Barge, D ^b   Bidaud, M ^b   Emonet, N ^a   Roy, D ^a   Vishnubhotla, L ^c   Pouilloux, I ^b   Barla, K ^a  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Freescale Semiconductors   (France)

Author keywords

Electrical thickness; Nitrided gate oxide; Poly depletion; SiON

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC FILMS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL THICKNESS; INVERSION LAYER CAPACITANCE; NITRIDED GATE OXIDES; POLY DEPLETION;

CMOS INTEGRATED CIRCUITS;

EID: 9544236213     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.014     Document Type: Conference Paper

References (5)

1. Richter C, Nguyen N, Gusev E, Zabel T, Alers G. in: Characterization and metrology for ULSI technology, 2000, p. 134-9.
2. Kraus P, Ahmed K, Olsen C, Nouri F. IEEE Electron Dev Lett 2003;24:559-61.
3. Mathieu H, Physique des semi-conducteurs, 5ème édition, Dunod, p. 295.
4. Shallenberger J, Cole D, Novak S, J Vac Sci Technol., 1999; pp. 1086-1090.
5. Bienacel J, Emonet N, Richard C, Barge D, Bidaud M. Determination of nitrogen profile in nitrided oxides with XPS measurement and HF etching. Journal of Non-Crystalline Solids 2004, [to be published].