In-line monitoring of advanced microelectronic processes using combined X-ray techniques

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 84-89

  Wyon, C ^a,c   Delille, D ^b   Gonchond, J P ^c   Heider, F ^d   Kwakman, L ^b   Marthon, S ^a   Mazor, I ^e   Michallet, A ^a,c   Muyard, D ^a   Perino Gallice, L ^b   Royer, J C ^a   Tokar, A ^e  

^a CEA LETI   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c STMICROELECTRONICS   (France)

^d INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^e NONE   (Israel)

Author keywords

Copper interconnects; High ; Low ; Microelectronic; X Ray fluorescence; X Ray reflectivity

Indexed keywords

COPPER COMPOUNDS; FLUORESCENCE; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); METALLIC FILMS; SILICON WAFERS; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS; X RAY ANALYSIS;

X-RAY FLUORESCENCE (XRF); X-RAY REFLECTIVITY (XRR);

MICROELECTRONICS;

EID: 10744229968     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.159     Document Type: Conference Paper

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