Physical characterization by valence electron energy loss spectroscopy

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2364-2367

  Pokrant, S ^a   Pantel, R ^b   Cheynet, M ^c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c CNRS   (France)

Author keywords

EELS; NiSi; TEM

Indexed keywords

COMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; NICKEL COMPOUNDS; PHYSICAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

NICKEL SILICIDE; PHYSICAL CHARACTERIZATION; SPATIAL RESOLUTION;

CMOS INTEGRATED CIRCUITS;

EID: 33751229648     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.037     Document Type: Article

References (8)

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